Nanopipes in thick GaN films grown at high growth rate

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 532-535

  Valcheva, E ^a,b   Paskova, T ^a   Persson, P O A ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; DISLOCATIONS (CRYSTALS); GROWTH KINETICS; HYDRIDES; NANOSTRUCTURED MATERIALS; SAPPHIRE; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDRIDE VAPOR PHASE EPITAXY; NANOPIPE; SCREW DISLOCATION; THREADING DISLOCATION;

GALLIUM NITRIDE;

EID: 0036968868     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<532::AID-PSSA532>3.0.CO;2-R     Document Type: Article

References (7)

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