Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 19-26

  Valcheva, E ^a   Paskova, T ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Structural defects; A1. Transmission electron microscopy; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; B1. Nanopipes

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); MICROMETERS; NANOSTRUCTURED MATERIALS; NUCLEATION; REACTION KINETICS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

HOMOEPITAXIAL GROWTH;

GALLIUM NITRIDE;

EID: 0038408710     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01190-4     Document Type: Article

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