Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 439-442

  Richter, E ^a   Gramlich, S ^a   Klein, A ^a   Nebauer, E ^a   Rechenberg, I ^a   Zeimer, U ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942478611     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<439::AID-PSSA439>3.0.CO;2-5     Document Type: Article

References (10)

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