Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

Vacuum

Volumn 82, Issue 10, 2008, Pages 988-993

  Prazmowska, J ^a   Korbutowicz, R ^a   Paszkiewicz, R ^a   Szyszka, A ^a   Serafinczuk J ^a   Podhorodecki, A ^a   Misiewicz, J ^a   Tlaczala M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

GaN; HVPE; LT GaN; Nucleation layer; Thick GaN layer

Indexed keywords

DEPOSITION; NUCLEATION; SAPPHIRE; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); NUCLEATION LAYERS; THICK GAN LAYERS;

GALLIUM NITRIDE;

EID: 43449098503     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.01.037     Document Type: Article

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