Hillocks and hexagonal pits in a thick film grown by HVPE

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1556-1559

  Wei, T B ^a   Duan, R F ^a   Wang, J X ^a   Li, J M ^a   Huo, Z Q ^a   Zeng, Y P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cathodoluminescence; GaN; Hillocks; HVPE; Pits

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE (FLUID); OXYGEN; SEMICONDUCTING GALLIUM; THICK FILMS; VAPOR PHASE EPITAXY;

CRYSTALLINE QUALITIES; EDGE EMISSIONS; FILM SURFACES; GAN; GAN FILMS; GAN/SAPPHIRE; HEXAGONAL PITS; HILLOCKS; HVPE; HYDRIDE VAPOR PHASE EPITAXIES; MICRO PIPES; OXYGEN IMPURITIES; PITS; SCREW DISLOCATIONS; SPIRAL GROWTHS; STRONG EMISSIONS;

FILM GROWTH;

EID: 56049124631     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.02.024     Document Type: Article

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