Photoluminescence response of ion-implanted silicon

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Harding, Ruth E ^a   Davies, Gordon ^a   Hayama, S ^a   Coleman, P G ^b   Burrows, C P ^b   Wong Leung, J ^c  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b University of Bath   (United Kingdom)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; QUENCHING; RADIATION DAMAGE;

ATOMIC SPACINGS; ION-IMPLANTED SILICON; LUMINESCENCE INTENSITY; PHOTOLUMINESCENCE RESPONSE;

SEMICONDUCTING SILICON;

EID: 33750738094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2378402     Document Type: Article

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