Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Harding, R ^a   Davies, G ^a   Tan, J ^a   Coleman, P G ^b   Burrows, C P ^b   Wong Leung, J ^c  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b University of Bath   (United Kingdom)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE BAND; POSITRON ANNIHILATION;

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DEFECTS; ETCHING; ION IMPLANTATION; SILICON;

PHOTOLUMINESCENCE;

EID: 33750024769     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354332     Document Type: Article

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