Point defect engineered Si sub-bandgap light-emitting diode

Optics Express

Volumn 15, Issue 11, 2007, Pages 6727-6733

  Bao, Jiming ^a   Tabbal, Malek ^a,b   Kim, Taegon ^a   Charnvanichborikarn, Supakit ^c   Williams, James S ^c   Aziz, Michael J ^a   Capasso, Federico ^a  

^a HARVARD UNIVERSITY   (United States)

^b AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ION IMPLANTATION; LIGHT EMISSION; POINT DEFECTS; RAPID THERMAL ANNEALING;

PULSED LASER MELTING; RADIATIVE RECOMBINATION RATE; ZERO PHONON EMISSION;

LIGHT EMITTING DIODES;

EID: 34249705340     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.006727     Document Type: Article

References (34)

1. S. Ossicini, L. Pavesi, and F. Priolo, Light Emitting Si for Microphotonics, Springer Tracts in Modern Physics Vol. 194. (Springer-Verlag, Berlin, 2003).
2. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta and P. M. Fauchet, "Si-based visible light-emitting devices integrated into microelectronic circuits," Nature 384, 338 (1996).
3. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo and F. Priolo, "Optical gain in Si nanocrystals," Nature 408, 440-444 (2000).
4. 2/Si superlattices," Nature 378, 258-260 (1995).
5. A. G. Cullis and L. T. Canham, "Visible light emission due to quantum size effects in highly porous crystalline Si," Nature 353, 335-338 (1991).
6. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao and K. P. Homewood, "An efficient room-temperature Si-based light-emitting diode," Nature 410, 192-194 (2001).
7. E. Ö. Sveinbjörnsson and J. Weber, "Room temperature electroluminescence from dislocation-rich silicon," Appl. Phys. Lett. 69, 2686-2688 (1996).
8. P. L. Bradfield, T. G. Brown and D. G. Hall, "Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial silicon," Appl. Phys. Lett. 55, 100-102 (1989).
9. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson and J. M. Poate, "Room-temperature sharp line electroluminescence at λ= 1.54 μm from an erbium-doped Si light-emitting diode," Appl. Phys. Lett. 64, 2842-2844 (1994).
10. D. Leong, M. Harry, K. J. Reeson and K. P. Homewood, "A silicon/iron-disilicide light-emittingdiode operating at a wavelength of 105μm," Nature 387,686-688 (1997).
11. S. G. Cloutier, P. A. Kossyrev and J. Xu, "Optical gain and stimulated emission in periodic nanopatterned crystalline Si," Nat. Mater. 4, 887-891 (2005).
12. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang and M. Paniccia, "An all-Si Raman laser," Nature 433, 292-294 (2005).
13. O. Boyraz and B. Jalali, "Demonstration of a Si Raman laser," Opt. Express 12, 5269 (2004).
14. M. S. Skolnick, A. G. Cullis and H. C. Webber, "Defect photoluminescence from pulsed-laser-annealed ion-implanted Si," Appl. Phys. Lett. 38, 464-466 (1981).
15. G. Götz, R. Nebelung, D. Stock and W. Ziegler, " Photoluminescence investigation of defects after ionimplantation and laser annealing," Nuclear Instruments and methods in physics research B2, 757-760 (1984).
16. G. Davies, "The optical properties of luminescence centers in Si," Phys. Rep. 176, 83-188 (1989).
17. S. Coffa, S. Libertino and C. Spinella, "Transition from small interstitial clusters to extended {311} defects in ion-implanted Si," Appl. Phys. Lett. 76, 321-323 (2000);
18. P.K. Giri, S. Coffa, and E. Rimini, "Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted Si," Appl. Phys. Lett. 78, 291-293 (2001).
19. P.K. Giri, "Photoluminescence signature of Si interstitial cluster evolution from compact to extended structures in ion-implanted Si," Semiconductor science and technology 20, 638-644 (2005).
20. P. J. Schultz, T. D. Thompson and R. G. Elliman, "Activation energy for the photoluminescence W center in Si," Appl. Phys. Lett. 60, 59-61 (1992).
21. M. Nakamura, S. Nagai, Y. Aoki and H. Naramoto, "Oxygen participation in the formation of the photoluminescence W center and the center's origin in ion-implanted Si crystals," Appl. Phys. Lett. 72, 1347-1349 (1998).
22. G. M. Lopez and V. Fiorentini, "Structure, energetics and extrinsic levels of small self-interstitials clusters in Si," Phys. Rev. B, 69, 155206-155213 (2004).
23. C. R. Jones, J. Coutinho and P. R. Briddon, "Density-functional study of small interstitial clusters in Si: Comparison with experiments," Phys. Rev. B 72, 155208-155212 (2005).
24. D. E. Hoglund, M. O. Thompson and M. J. Aziz, "Experimental test of morphological stability theory for a planar interface during rapid solidification," Phys. Rev. B 58, 189 (1998).
25. T.G. Kim, J. M. Warrender and M. J. Aziz, "Strong sub-bandgap infrared absorption in Si supersaturated with sulfur," Appl. Phys. Lett. 88, 241902-241904 (2006).
26. M. J. Aziz, "Interface Attachment Kinetics in Alloy Solidification," Metall. Mater. Trans. A 27, 671 (1996);
27. J.A. Kittl, P.G. Sanders, M.J. Aziz, D.P. Brunco, and M.O. Thompson, "Complete Experimental Test for Kinetic Models of Rapid Alloy Solidification," Acta Mater. 48, 4797 (2000).
28. S. M. Sze, Physics of semiconductor devices, 2nd ed. (Wiley and Sons, New York, 1981), p. 69.
29. M. Tabbal, T. Kim, J.M. Warrender, M. J. Aziz, B. L. Cardozo and R. S. Goldman, Unpublished.
30. T. G. Brown and D. G. Hall, "Optical emission at 1.32 μm from sulfur-doped crystalline Si," Appl. Phys. Let. 49, 245-247 (1986).
31. P. W. Mason, H. J. Sun, B. Ittermann, S. S. Ostapenko, G. D. Watkins, L. Jeyanathan, M. Singh, G. Davies and E. C. Lightowlers, "Sulfur-related metastable luminescence center in Si," Phys. Rev. B, 58, 7007-7019 (1998).
32. T. G. Brown, P. L. Bradfield and D. G. Hall, "Concentration dependence of optical emission from sulfur-doped crystalline Si," Appl. Phys. Lett. 51, 1585-1587 (1987).
33. S.M.Sze, Physics of semiconductor devices, 2nd ed. (Wiley and Sons, New York, 1981), p. 145.
34. V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt and W. Schröter, "Room-temperature silicon light-emitting diodes based on dislocation luminescence," Appl. Phys. Lett. 84, 2106-2108 (2004).