Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 1-9

  Cho, Y S ^a   Hardtdegen, H ^a   Kaluza, N ^a   von der Ahe, M ^a   Breuer, U ^b   Bochem, H P ^a   Ruterana, P ^c   Schmalbuch, K ^d   Wenzel, D ^d   Schapers Th ^a   Beschoten, B ^d   Grutzmacher D ^a   Luth H ^a  

^a Institute of Bio and Nanosystems (IBN 1)   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Direction de la Recherche Fondamentale   (France)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

A1. Crystallites; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting materials

Indexed keywords

A1. CRYSTALLITES; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING MATERIALS;

CHROMIUM; CRYSTAL GROWTH; CRYSTALLITES; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; HYSTERESIS; MAGNETIC DEVICES; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIZATION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; VAPORS;

STRUCTURAL PROPERTIES;

EID: 70449509837     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.044     Document Type: Article

References (27)

1. Dietl T., and Ohno H. Engineering magnetism in semiconductors, Mater. Today 9 11 (2006) 18-26
2. Dietl T., Ohno H., Matsukura F., Cibert J., and Ferrand D. Model description of ferromagnetism in zinc-blende magnetic semiconductors, Science 287 (2000) 1019-1022
3. Mahadevan P., and Zunger A. Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb, Appl. Phys. Lett. 85 (2004) 2860-2862
4. Reed M.L., El-Masry N.A., Stadelmaier H.H., Ritums M.K., Reed M.J., Parker C.A., Roberts J.C., and Bedair S.M. Room temperature ferromagnetic properties of (Ga,Mn)N, Appl. Phys. Lett. 79 (2001) 3473-3475
5. Overberg M.E., Abernathy C.R., Pearton S.J., Theodoropoulou N.A., McCarthy K.T., and Hebard A.F. Indication of ferromagnetism in molecular-beam-epitaxy-derived n-type GaMnN, Appl. Phys. Lett. 79 (2001) 1312-1314
6. Thaler G.T., Overberg M.E., Gila B., Frazier R., Abernathy C.R., Pearton S.J., Lee J.S., Lee S.Y., Park Y.D., Khim Z.G., Kim J., and Ren F. Magnetic properties of n-GaMnN thin films, Appl. Phys. Lett. 80 (2002) 3964-3966
7. Sonoda S., Shimizu S., Sasaki T., Yamamoto Y., and Hori H. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire (0001) showing ferromagnetic behaviour at room temperature, J. Cryst. Growth 237 (2002) 1358-1362
8. Frazier R., Thaler G., Overberg M., Gila G., Abernathy C.R., and Pearton S.J. Indication of hysteresis in AlMnN, Appl. Phys. Lett. 83 (2003) 1758-1760
9. Hashimoto M., Zhou Y.-K., Kanamura M., and Asahi H. High temperature (>400 K) ferromagnetism in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy, Solid State Commun. 122 (2002) 37-39
10. Park S.E., Lee H.-J., Cho Y.C., Jeong S.-Y., Cho C.R., and Cho S. Room-temperature ferromagnetism in Cr-doped GaN single crystals, Appl. Phys. Lett. 80 (2002) 4187-4189
11. Liu H.X., Stephen, Wu Y., Singh R.K., Lin Gu, David, Smith J., Newman N., Dilley N.R., Montes L., and Simmonds M.B. Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN, Appl. Phys. Lett. 85 (2004) 4076-4078
12. Yang S.G., Pakhomov A.B., Hung S.T., and Wong C.Y. Room-temperature magnetism in Cr-doped AlN semiconductor films, Appl. Phys. Lett. 81 (2002) 2418-2420
13. Stephen A., Wu Y., Liu H.X., Lin Gu, Singh R.K., Budd L., van Schilfgaarde M., McCarthey M.R., David, Smith J., and Newman N. Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films, Appl. Phys. Lett. 82 (2003) 3047-3049
14. Teraguchi N., Suzuki A., Nanishi Y., Zhou Y.-K., Hashimoto M., and Asahi H. Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy, Solid State Commun. 122 (2002) 651-653
15. Cho Y.S., Kaluza N., Guzenko V., Schäpers Th., Hardtdegen H., Bochem H.-P., Breuer U., Ghadimi M.R., Fecioru-Morariu M., Beschoten B., and Lüth H. The growth of Cr-doped GaN by MOVPE towards spintronic applications, Phys. Status Solidi (a) 204 (2007) 72-77
16. Kaluza N., Steins R., Hardtdegen H., and Lüth H. MOVPE GaN growth: determination of activation energy using in-situ reflectometry, J. Cryst. Growth 272 (2004) 100-105
17. Kane M.H., Strassburg M., Asghar A., Li N., Fenwick W., and Ferguson I.T. Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semicondcutors, Proc. SPIE 6121 (2006) 61210L-1-15
18. Przybylińska H., Bonanni A., Wolos A., Kiecana M., Sawicki M., Dietl T., Malissa H., Simbrunner C., Wegscheider M., Sitter H., Rumpf K., Granitzer P., Krenn H., and Jantsch K. Magnetic properties of a new spintronic material-GaN:Fe, Mater. Sci. Eng. B 126 (2006) 222-225
19. Hashimoto M., Emura S., Tanaka H., Honma T., Umesaki N., Hasegawa S., and Asahi H. Local crystal structure and local electronic structure around Cr in low-temperature-grown GaCrN layers, J. Appl. Phys. 100 (2006) -1-103907-6
20. Hardtdegen H., Kaluza N., Steins R., Schmidt R., Wirtz K., Yakovlev E.V., Talalaev R.A., and Makarov Yu.N. MOVPE process for horizontal reactors with reduced parasitic deposition, J. Cryst. Growth 272 (2004) 407-414
21. Cho Y.S., Hardtdegen H., Kaluza N., Thillosen N., Steins R., Sofer Z., and Lüth H. Effect of carrier gas on GaN epilayer characteristics, Phys. Status Solidi (c) 3 (2006) 1408-1411
22. Cho Y.S., Hardtdegen H., Kaluza N., Steins R., Heidelberger G., and Lüth H. The growth mechanism of GaN with different H2/N2 carrier gas ratios, J. Cryst. Growth 307 (2007) 6-13
23. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., and Speck J.S. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films, Appl. Phys. Lett. 68 (1996) 643-645
24. P.B. Hirsch, A. Howie, R.B. Nicholson, D.W. Pashley, M.J. Whealan, in: Electron Microscopy of Thin Crystals, Butterworths, London, 1965, pp. 247-275.
25. Hardtdegen H., Kaluza N., Steins R., Cho Y.S., Schmidt R., Sofer Z., and Zettler J.-T. Observation of growth during the MOVPE of III-nitrides, J. Phys. IV France 132 (2006) 177-183
26. Son K.S., Kim D., Cho H.K., Lee K., Kim S., Park K., and Kim J. Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN, Phys. Status Solidi (c) (2003) 2095-2098
27. Cho H.K., Lee J.Y., Yang G.M., and Kim C.S. Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density, Appl. Phys. Lett. 79 (2001) 215-217