MOVPE GaN growth: Determination of activation energy using in-situ reflectometry

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 100-105

  Kaluza, N ^a   Steins, R ^a   Hardtdegen, H ^a   Lueth, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A1. Growth models; A1. In situ reflectometry; A3. Metalorganic vapor phase epitaxy; B1. Gallium nitride

Indexed keywords

ACTIVATION ENERGY; KINETIC THEORY; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; REFLECTOMETERS; TEMPERATURE CONTROL; THERMODYNAMICS;

EPILAYER GROWTH; GROWTH MODELS; IN-SITU REFLECTOMETRY; INJECTION GEOMETRY;

GALLIUM NITRIDE;

EID: 9944234411     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.060     Document Type: Conference Paper

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