MOVPE process for horizontal reactors with reduced parasitic deposition

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 407-414

  Hardtdegen, H ^a   Kaluza, N ^a   Steins, R ^a   Schmidt, R ^a   Wirtz, K ^a   Yakoviev, E V ^b   Talalaev, R A ^b   Makarov, Yu N ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Semiconductor Technology Research GmbH   (Germany)

Author keywords

A1. Modeling; A3. Metalorganic vapor phase epitaxy; A3. Parasitic deposition; B1. Nitrides

Indexed keywords

ACTIVATION ENERGY; CATALYSIS; CHEMICAL REACTORS; CRYSTAL GROWTH; ELECTRIC RESISTANCE; GALLIUM NITRIDE; STANDARDS;

CATALYTIC SURFACES; GROWTH PROCESSES; PARASITIC DEPOSITION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 9944257886     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.131     Document Type: Conference Paper

References (8)

1. S. Liu, D. Stevenson, J. Electrochem. Soc. 125 (1978) 1161.
2. M. Kamp, M. Mayer, A. Pelzmann, K. Ebeling, Mat. Res. Soc. Symp. Proc. 449 (1997) 161.
3. R. Sheknar, K. Jensen, Surf. Sci. 321 (1994) 301.
4. K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter, J. Crystal Growth 240 (2002) 87.
5. H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, J.-T. Zettler, Phys. Stat. Sol. (a) 201 (2004) 312.
6. M.G. Jacko, S.J.M. Price, Can. J. Chem. 41 (1963) 1560.
7. R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov, J. Crystal Growth 230 (2001) 232.
8. M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, R. Kaufmann, J. Crystal Growth 223 (2001) 21.