The growth of Cr-doped GaN by MOVPE towards spintronic applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 72-77

  Cho, Y S ^a   Kaluza, N ^a   Guzenko, V ^a   Schapers Th ^a   Hardtdegen, H ^a   Bochem, H P ^a   Breuer, U ^a   Ghadimi, M R ^b   Fecioru Morariu, M ^b   Beschoten, B ^b   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GAS; LAYER GROWTHS; SPINTRONIC APPLICATIONS;

CHROMIUM; DOPING (ADDITIVES); GROWTH (MATERIALS); MAGNETIZATION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY;

GALLIUM NITRIDE;

EID: 33846450662     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673016     Document Type: Conference Paper

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