The growth mechanism of GaN with different H2/N2 carrier gas ratios

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 6-13

  Cho, Yong Suk ^a   Hardtdegen, Hilde ^a   Kaluza, Nicoleta ^a   Steins, Roger ^a   Heidelberger, Gero ^a   Lüth, Hans ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

EPILAYERS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; SAPPHIRE; SURFACE STRUCTURE;

CARRIER GAS RATIOS; HIGH TEMPERATURE GROWTH;

GALLIUM NITRIDE;

EID: 34548127806     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.058     Document Type: Article

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