Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2095-2098

  Son, Kwang Suk ^a   Kim, Dongyu ^a   Cho, Hyung Koun ^a   Lee, Kyuhan ^b   Kim, Sunwoon ^b   Park, Keunseop ^b   Kim, Junho ^c  

^a Dong A University   (South Korea)

^b Optronix Inc   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION FREE; GAN THIN FILMS; HIGH TEMPERATURE; INTERMEDIATE TEMPERATURES; MORPHOLOGY ANALYSIS; PIT FORMATION; STRUCTURAL CHARACTERISTICS; THREADING DISLOCATION;

GROWTH TEMPERATURE; SCREW DISLOCATIONS; SEMICONDUCTOR DOPING; SILICON; THIN FILMS;

GALLIUM NITRIDE;

EID: 84875113221     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303484     Document Type: Conference Paper

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