Optical properties of epitaxial lateral overgrowth GaN structures studied by Raman and cathodoluminescence spectroscopies

Journal of Applied Physics

Volumn 96, Issue 7, 2004, Pages 3639-3644

  Martinez O ^a   Avella, M ^a   Jimenez J ^a   Gerard B ^b   Cusco R ^c   Artus L ^c  

^a UNIVERSIDAD DE VALLADOLID   (Spain)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; GRAIN BOUNDARIES; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCATHODES; RAMAN SPECTROSCOPY; REDUCTION; STRUCTURAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO); PLASMON-COUPLED MODES; THIN LAYERS; YELLOW LUMINESCENCE (YL);

GALLIUM NITRIDE;

EID: 7044237025     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786670     Document Type: Article

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