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Current Applied Physics

Volumn 2, Issue 6, 2002, Pages 515-519

Optical properties of laterally overgrown GaN pyramids grown on (1 1 1) silicon substrate

(6) Cho, Y H a Kwon, B J a Kim, H M b Kang, T W b Song, J J c Yang, W d

a Chungbuk National University (South Korea)

b Dongguk University (South Korea)

c OKLAHOMA STATE UNIVERSITY (United States)

d HONEYWELL TECHNOLOGY CENTER (United States)

Author keywords

Cathodoluminescence; Electron microscopy; GaN pyramid; Lateral epitaxil overgrowth; Optical properties

Indexed keywords

EID: 0036891587 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/S1567-1739(02)00168-2 Document Type: Article

Times cited : (5)

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