Si/SiGe resonant interband tunneling diodes incorporating δ-doping layers grown by chemical vapor deposition

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1173-1175

  Park, Si Young ^a   Anisha, R ^a   Berger, Paul R ^a   Loo, Roger ^b   Nguyen, Ngoc Duy ^b   Takeuchi, Shotaro ^b   Caymax, Matty ^b  

^a The Ohio State University   (United States)

^b IMEC   (Belgium)

Author keywords

Chemical vapor deposition (CVD); Doping; Negative differential resistance (NDR); Resonant interband tunneling diodes (RITDs); Semiconductor epitaxial layers; Silicon alloys; Silicon germanium; Tunnel diodes

Indexed keywords

DOPING; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RESONANT INTERBAND TUNNELING DIODES (RITDS); SEMICONDUCTOR EPITAXIAL LAYERS; SILICON GERMANIUM;

BICMOS TECHNOLOGY; CHEMICAL RESISTANCE; CRYSTAL GROWTH; DIODES; EPITAXIAL LAYERS; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEGATIVE RESISTANCE; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON ALLOYS; SUBSTRATES; TUNNEL DIODES; WIND TUNNELS;

CHEMICAL VAPOR DEPOSITION;

EID: 70350586433     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2030989     Document Type: Article

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