NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 265-266

  Sudirgo, S ^a   Pawlik, D J ^a   Kurinec, S K ^a   Thompson, P E ^b   Daulton, J W ^c   Park, S Y ^c   Yu, R ^c   Berger, P R ^c   Rommel, S L ^a  

^a Department of Microelectronic Engineering ^*  (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33947145942     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E. Goto, et al, "Esaki diode high-speed logical circuits," IRE Trans. Elec. Comp.., vol. 9, pp. 25-29, Mar. 1960.
2. J.P.A. Van der Wagt, "Tunneling-based SRAM," Proc. of IEEE, vol. 87, pp. 571-595, April 1999.
3. H. Sorada, et al, "A Monolithically Integrated Si-interband Tunneling Diode (IBTD)/MOSFET for Ultra Low Voltage Operation Below 0.5 V," Superlattices and Microstructures, vol.28, pp. 331-337, 2000.
4. S. Sudirgo, et al, "Monolithically Integrated Si/SiGe Resonant Interband Tunnel Diode/CMOS Demonstrating Low Voltage MOBILE Operation," Solid-State Elec, vol. 48, issues 10-11, pp. 1907-1910, Oct.-Nov., 2004.
5. N. Jin, et al, "The Effect of Spacer Thicknesses on Si-based Resonant Interband Tunneling Diode Performance and their Application to Low-Power Tunneling Diode SRAM Circuits," Submitted to Trans. Elec. Dev.