P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Electronics Letters

Volumn 45, Issue 14, 2009, Pages 759-761

  Thompson, P E ^a   Jernigan, G G ^a   Park, S Y ^b   Yu, R ^b   Anisha, R ^b   Berger, P R ^b,d   Pawlik, D ^c   Krom, R ^c   Rommel, S L ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b The Ohio State University   (United States)

^c Rochester Institute of Technology   (United States)

^d OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; B-DOPED SI; DOPED LAYERS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; RESONANT INTERBAND TUNNEL DIODES; ROOM TEMPERATURE; SOLID SOURCE MOLECULAR BEAM EPITAXY; THERMAL STABILITY;

CRYSTAL GROWTH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NEGATIVE RESISTANCE; SILICON; TUNNEL DIODES; TUNNELS; WIND TUNNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650290350     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.1007     Document Type: Article

References (10)

1. Duschl, R., and Eberl, K.: ' Physics and applications of Si/SiGe/Si resonant interband tunneling diodes ', Thin Solid Films, 2000, 380, p. 151-153 10.1016/S0040-6090(00)01491-7 0040-6090
2. 2 for K-band mixed-signal applications ', IEEE Electron Device Lett., 2006, 27, (5), p. 364-367 10.1109/LED.2006.873379 0741-3106
3. Chung, S.-Y., Jin, N., Pavlovicz, R.E., Berger, P.R., Yu, R., and Thompson, P.E.: ' Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy ', IEEE Trans. Nanotechnol., 2007, 6, (2), p. 158-163 1536-125X
4. Duschl, R., Schmidt, O.G., Reitemann, G., Kasper, E., and Eberl, K.: ' High room temperature peak-to-valley current ratio in Si based Esaki diodes ', Electron. Lett., 1999, 35, (13), p. 1111-1112 0013-5194
5. Jin, N., Chung, S.-Y., Yu, R., Heyns, R., Berger, P.R., and Thompson, P.E.: ' The effect of spacer thickness on Si-based resonant interband tunneling diode performance and their applications to low power tunneling diode SRAM circuits ', IEEE Trans. Electron Devices, 2006, 53, (9), p. 2243-2249 0018-9383 (Pubitemid 46405151)
6. Sudirgo, S., Nandgaonkar, R.P., Curanovic, B., Hebding, J.L., Saxer, R.L., Islam, S.S.W., Hirschman, H.D., Rommel, S.L., Kurinec, S.K., Thompson, P.E., and Berger, P.R.: ' Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS logic elements demonstrating low voltage MOBILE operation ', Solid-State Electronics, 2004, 48, p. 1907-1910 10.1016/j.sse.2004.05.034
7. Chung, S.-Y., Park, S.-Y., Daulton, J., Yu, R., Berger, P.R., and Thompson, P.E.: ' Integration of Si/SiGe HBT and Si-based RITD Demonstrating Controllable Negative Differential Resistance for Wireless Applications ', Solid-State Electron., 2006, 50, (6), p. 973-978 0038-1101 (Pubitemid 44015831)
8. Thompson, P.E., and Jernigan, G.G.: ' Determination of the surface segregation ratio of P in Si(100) during solid-source molecular beam epitaxial growth ', Semicond. Sci. Technol., 2007, 22, p. S80-S83 0268-1242
9. Jorke, H., Kibbel, H., Strohm, K., and Kasper, E.: ' Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures ', Appl. Phys. Lett., 1993, 63, (17), p. 2408-2410 0003-6951
10. Hobart, K.D., Godbey, D.J., Twigg, M.E., Fatemi, M., Thompson, P.E., and Simons, D.E.: ' Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy ', Surf. Sci., 1995, 334, p. 29-38 0039-6028