Lateral and vertical scaling of a QSA HBT for a 0.13 μm 200GHz SiGe:C BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 229-232

  Van Huylenbroeck, S ^a   Sibaja Hernandez, A ^a,b   Piontek, A ^a   Choi, L J ^a   Xu, M W ^a   Ouassif, N ^a   Vleugels, F ^a   Van Wichelen, K ^a   Witters, L ^a   Kunnen, E ^a   Leray, P ^a   Devriendt, K ^a   Shi, X ^a   Loo, R ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL MECHANICAL POLISHING; CMOS INTEGRATED CIRCUITS; DIFFUSION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; OPTIMIZATION; OSCILLATORS (ELECTRONIC); POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

BICMOS; CMOS DEVICES; EPITAXIAL LAYERS; QUASI SELF-ALIGNED ARCHITECTURE (QSA); THERMAL BUDGET;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 20144387240     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G. Freeman, B. Jagannathan, S.-J. Jeng, J-S. Rieh, A. D. Stricker, D. C. Ahlgren and S. Subbanna, 'Transistor Design and Applications Considerations for > 200GHz SiGe HBTs", Transactions on Electron Devices, vol 50, No. 3, pp. 645-655, March 2003.
2. T. Hashimoto, Y. Nonaka, T. Tominari, H. Fujiwara, K. Tokunaga, M. Arai, S. Wada, T. Udo, M. Seto, M. Miura, H. Shimamoto, K. Washio and H. Tomioka, "Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS", IEDM Techn. Digest, pp. 129-132, 2003
3. H. Rucker, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, W. Hoppner, D. Knoll, K. Kopke, S. Marschmeyer, H. H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, H.-E. Wulf and Y. Yamamoto, "SiGe:C BiCMOS Technology with 3.6ps Gate Delay", IEDM Techn. Digest, pp. 121-124, 2003
4. T. F. Meister, H. Schafer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M. Wurzer, A. Mitchell, T. Bottner and J. Bock, "SiGe Bipolar Technology with 3.9ps Gate Delay", BCTM Techn. Digest, pp. 103-106, 2003
5. H. Baudry, B. Szelag, F. Deleglise, M. Laurens, J. Mourier, F. Saguin, G. Troillard, A. Chantre and A. Monroy, "BiCMOS7RF: a highly-manufacturable 0.25μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy", BCTM Techn. Digest, pp. 207-210, 2003
6. M. W. Xu, S. Decoutere, A. Sibaja-Hernandez, K. Van Wichelen, L. Witters, R. Loo, E. Kunnen, C. Knorr, A. Sadovnikov and C. Bulucea, "Ultra low power SiGe:C HBT for 0.18μm RF-BiCMOS", IEDM Techn. Digest, pp. 125-128, 2003
7. K. Van Wichelen, L. Witters, S. Van Huylenbroeck, P. Leray, D. Laidler, E. Kunnen ans Stefaan Decoutere, "Requirements on CD and Overlay for 200 GHz QSA SiGe:C HBT's", ESSDERC-2004, to be published.