Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 9104-9110

  Chung, Sung Yong ^a   Jin, Niu ^a   Rice, Anthony T ^a   Berger, Paul R ^a,e   Yu, Ronghua ^b   Fang, Z Q ^c   Thompson, Phillip E ^d  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e Smith Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON TRAPS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SPECTROSCOPY; SUBSTRATES;

ELECTRON TRAP DENSITY;

SILICON;

EID: 0037636347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569029     Document Type: Article

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