Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 747-753

  Chung, Sung Yong ^a   Jin, Niu ^a   Pavlovicz, Ryan E ^a   Berger, Paul R ^a,b   Yu, Ronghua ^b   Fang, Zhaoqiang ^c   Thompson, Phillip E ^d  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY (LT-MBE); VALLEY CURRENT DENSITY;

ANNEALING; CURRENT DENSITY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON;

TUNNEL DIODES;

EID: 3142732416     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755436     Document Type: Article

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