Si nanowires grown via the vapour-liquid-solid reaction

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 37-42

  Westwater, J ^a   Gosain, D P ^a   Usui, S ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

VAPOR LIQUID SOLID REACTIONS;

SEMICONDUCTING SILICON;

EID: 0031674249     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<37::AID-PSSA37>3.0.CO;2-Z     Document Type: Article

References (8)

1. R. S. WAGNER and W. C. ELLIS, Appl. Phys. Lett. 4, 89 (1964).
2. R. S. WAGNER and C. J. DOHERTY, J. Electrochem. Soc. 115, 93 (1968).
3. E. I. GIVARGIZOV, J. Cryst. Growth 31, 20 (1975).
4. G. LELAY, Surf. Sci. 132, 169 (1983).
5. H. P. TANG, L. VESCAN, and H. LUTH, J. Cryst. Growth 116, 1 (1992).
6. J. WESTWATER, D. P. GOSAIN, S. TOMIYA, S. USUI, and H. RUDA, J. Vac. Sci. Technol. B 15, 554 (1997).
7. J. WESTWATER, D. P. GOSAIN, and S. USUI, Jpn. J. Appl. Phys., submitted.
8. A. A. SCHMIDT, H. EGGERS, K. HERWIG, and R. ANTON, Surf. Sci. 349, 301 (1996).