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International Journal of Materials Research

Volumn 97, Issue 7, 2006, Pages 1008-1015

On the formation of Si nanowires by molecular beam epitaxy

(5) Werner, Peter a,b Zakharov, Nikolai D a Gerth, Gerhard a Schubert, Luise a Göele, Ulrich a

a MPI fu Mikrostrukturphysik (Germany)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

Molecular beam epitaxy; Semiconductor nanostructure; Silicon nano wires

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; DISSOLUTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); SUPERSATURATION;

SEMICONDUCTOR NANOSTRUCTURE; SILICON NANO-WIRES; SURFACE DIFFUSION; ULTRA-HIGH VACUUM CONDITIONS;

SILICON;

EID: 33746868370 PISSN: 18625282 EISSN: None Source Type: Journal
DOI: 10.3139/146.101332 Document Type: Article

Times cited : (74)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.