Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 160-168

  Hull, R ^a,b   Floro, J ^a   Graham, J ^a   Gray, J ^c   Gherasimova, M ^a   Portavoce, A ^d   Ross, F M ^e  

^a University of Virginia   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UNIVERSITY OF PITTSBURGH   (United States)

^d AIX MARSEILLE UNIVERSITÉ   (France)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Epitaxial quantum dots; Focused ion beam; Nanoelectronics; Nanoscale doping

Indexed keywords

ADATOM MOBILITIES; CLOSE PROXIMITY; CONVENTIONAL LITHOGRAPHY; EPITAXIAL QUANTUM DOTS; FUNCTIONALIZATIONS; HIERARCHICAL ORDER; LENGTH SCALE; NANO SCALE; NANOELECTRONIC ARCHITECTURE; NANOSCALE DOPING; POSITIONAL CONTROL; POTENTIAL APPLICATIONS; QUANTUM DOT MOLECULES; QUANTUM DOT NANOSTRUCTURES; QUANTUM DOTS; SI(1 0 0); SPATIAL FREQUENCY; SPIN INTERACTION; TEMPLATING; ULTRA-SMALL; WETTING LAYER;

FOCUSED ION BEAMS; GERMANIUM; INTEGRATED CIRCUIT LAYOUT; IONS; LIQUID METALS; MANGANESE; MANGANESE COMPOUNDS; NANOELECTRONICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NUCLEATION; OPTICAL WAVEGUIDES; SILICON ALLOYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349925727     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.10.011     Document Type: Article

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