Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Gherasimova, M ^a   Hull, R ^a,b   Reuter, M C ^c   Ross, F M ^c  

^a University of Virginia   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PLASMA INTERACTIONS; EPITAXIAL GROWTH; FOCUSED ION BEAMS; GERMANIUM; ION BEAMS; ION BOMBARDMENT; NUCLEATION; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEPARATION; SILICON;

AMERICAN INSTITUTE OF PHYSICS (AIP); CONTROLLED NUCLEATION; GE QUANTUM DOTS; ION BEAM PULSES; KEY FACTORS; LARGE AREAS; LOW DOSE; NUCLEATION SITES; SI(1 0 0 ); SITE SEPARATION; TARGET SITES; TEMPLATED; TEMPLATING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 47549115792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957676     Document Type: Article

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