Surface modification of silicon with single ion irradiation

Applied Surface Science

Volumn 254, Issue 1 SPEC. ISS., 2007, Pages 242-246

  Ohdomari, Iwao ^a   Kamioka, Takefumi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

In situ observation; nm size phenomena; Si nanoelectronics; Single ion; Surface modification

Indexed keywords

EXPLOSIVES; ION BOMBARDMENT; MASS TRANSFER; NANOELECTRONICS; NANOSTRUCTURES; SURFACE TREATMENT; THROUGHPUT;

DEVICE FUNCTIONS; ENERGETIC PARTICLES; SINGLE ION IRRADIATION EFFECTS; SURFACE MODIFICATION OF SILICON;

SILICON COMPOUNDS;

EID: 35148813141     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.07.034     Document Type: Article

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