Room-Temperature growth of silicon oxide nanofilms: New opportunities for plastic electronics

Angewandte Chemie - International Edition

Volumn 48, Issue 14, 2009, Pages 2457-2459

  Hoffmann, Helmuth ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Atomic layer deposition; Langmuir Blodgett films; Nanostructures; Organic transistors; Silicon oxide

Indexed keywords

COMPONENT DIMENSIONS; FABRICATION METHOD; GATE DIELECTRIC LAYERS; LAYER-BY-LAYERS; LOW TEMPERATURES; NANO FILMS; NANO METER RANGE; NEW OPPORTUNITIES; ORGANIC MATERIALS; ORGANIC TRANSISTORS; PHASE PROCESSING; PLASTIC ELECTRONICS; PLASTIC TRANSISTORS; POLYMER PRECURSORS; PRECISE CONTROL; ROOM TEMPERATURE; ULTRATHIN SILICON OXIDE;

GATE DIELECTRICS; GATES (TRANSISTOR); NANOSTRUCTURES; OXIDE FILMS; POLYMER FILMS; SILICON COMPOUNDS; SILICON OXIDES; THIN FILM TRANSISTORS; TRANSISTORS; ULTRATHIN FILMS;

LANGMUIR BLODGETT FILMS;

EID: 70349909881     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200805329     Document Type: Article

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