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Journal of the American Chemical Society

Volumn 127, Issue 43, 2005, Pages 14996-14997

n-type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups

(7) Ando, Shinji a Murakami, Ryo a Nishida, Jun Ichi a Tada, Hirokazu b Inoue, Youji c Tokito, Shizuo c Yamashita, Yoshiro a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OLIGOMER; THIAZOLE DERIVATIVE;

ARTICLE; CROSS COUPLING REACTION; CRYSTAL STRUCTURE; DIFFERENTIAL PULSE VOLTAMMETRY; ELECTROCHEMISTRY; ELECTRON; ELECTRONICS; MOLECULAR INTERACTION; N TYPE ORGANIC FIELD EFFECT TRANSISTOR; SEMICONDUCTOR; X RAY CRYSTALLOGRAPHY;

EID: 27544476830 PISSN: 00027863 EISSN: None Source Type: Journal
DOI: 10.1021/ja055686f Document Type: Article

Times cited : (341)

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