Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching

Journal of Physics D: Applied Physics

Volumn 42, Issue 15, 2009, Pages

  Min, T H ^a   Park, B J ^a   Kang, S K ^b   Gweon, G H ^a   Kim, Y Y ^a   Yeom, G Y ^a,b,c  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c National Program for Tera Level Devices   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM ENERGIES; CHLORINE IONS; ETCH RATES; ION BOMBARDMENT ENERGY; NEUTRAL BEAM ETCHING; NEUTRAL BEAMS; SILICON LAYER; SILICON ON INSULATOR WAFERS; SOI WAFERS;

BEAM PLASMA INTERACTIONS; CHLORINE; ETCHING; ION BEAMS; ION BOMBARDMENT; IONS; METAL ANALYSIS; MICROSENSORS; PHOTORESISTS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PROPERTIES; SURFACE ROUGHNESS; TOKAMAK DEVICES;

SILICON WAFERS;

EID: 70249098103     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/15/155204     Document Type: Article

References (18)

1. Feng X Q and Huang Y 2004 Int. J. Solids Struct. 41 4299-320
2. Bruel M et al 1995 "Smart cut": a promising new SOI material technology Proc. 1995 IEEE Int. SOI Conf. (Tucson, AZ) pp 178-9
3. Maleville C and Mazure C 2004 Solid-State Electron. 48 1055-63
4. Esseni D 2004 IEEE Trans. Electron Dev. 51 394
5. Esseni D, Abramo A, Selmi L and Sangiorgi E 2002 Electron Devices Meeting (IEDM'02) Digest pp 719-22
6. Jin S, Fischetti M V and Tang T-w 2007 IEEE Trans. Electron Dev. 54 2191
7. Ohata A, Casse M and Faynot O 2008 Solid-State Electron. 52 126-33
8. Gao F, Wang Y, Cao G, Jia X and Zhang F 2006 Appl. Surf. Sci. 252 5071-5
9. Park W B, Kang H C and Sung M Y 2000 Trans. Electr. Electron. Mater. 1 6-11
10. Sano Y, Masuda T, Mimura H and Yamauchi K 2008 J. Cryst. Growth 310 2173-7
11. Teraoka Y and Nishiyama I 1993 Appl. Phys. Lett. 63 3355
12. Yokogawa K, Yunogami T and Mizutani T 1996 Japan. J. Appl. Phys. 35 1901-5
13. Endo K et al 2006 IEEE Trans. Electron Dev. 53 1826-33
14. Park B J et al 2008 J. Phys. D: Appl. Phys. 41 024005
15. Ma X, Liu W, Chen C, Zhan D, Song Z and Feng S 2006 Semicond. Sci. Technol. 21 959-63
16. Czubanowski M, Tegenkamp C, Ernst W and Pfnür H 2004 Appl. Phys. Lett. 84 350
17. Chapman B 1980 Glow Discharge Process (New York: Wiley) pp 244-9
18. Kawase T and Hamaguchi S 2007 Thin Solid Films 515 4883-6