Reduction of sidewall roughness in silicon-on-insulator rib waveguides

Applied Surface Science

Volumn 252, Issue 14, 2006, Pages 5071-5075

  Gao, F ^a   Wang, Y ^a   Cao, G ^a   Jia, X ^a   Zhang, F ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Inductive coupled plasma reactive ion etching (ICPRIE); Scattering loss; Sidewall roughness; Silicon on insulator (SOI)

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

INDUCTIVE COUPLED PLASMA REACTIVE ION ETCHING (ICPRIE); SCATTERING LOSS; SIDEWALL RIPPLES; SIDEWALL ROUGHNESS;

WAVEGUIDE ATTENUATORS;

EID: 33646553380     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.070     Document Type: Article

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