Ultraprecision finishing technique by numerically controlled sacrificial oxidation

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2173-2177

  Sano, Yasuhisa ^a   Masuda, Takaya ^a   Mimura, Hidekazu ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Surface processes; A1. Surface structure; B2. Semiconducting silicon; B3. Field effect transistors

Indexed keywords

FIELD EFFECT TRANSISTORS; OXIDATION; SILICON WAFERS; SURFACE ROUGHNESS; ULTRATHIN FILMS;

SURFACE PROCESSES; ULTRAPRECISION FINISHING TECHNIQUE;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 41449083080     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.094     Document Type: Article

References (5)

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3. Mori Y., Yamauchi K., Yamamura K., and Sano Y. Rev. Sci. Instrum. 71 (2000) 4627
4. Mori Y., Yamamura K., and Sano Y. Rev. Sci. Instrum. 75 (2004) 942
5. Sano Y., Yamamura K., Mimura H., Yamauchi K., and Mori Y. Rev. Sci. Instrum. 78 (2007) 086102