Electrical characteristics related to silicon film thickness in advanced FD SOI-MOSFETs

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 126-133

  Ohata, A ^a   Casse M ^b   Faynot, O ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

HfO2; Metal gate; MOSFET; SOI; Ultra thin silicon

Indexed keywords

CARRIER CONCENTRATION; COULOMB BLOCKADE; GATE DIELECTRICS; MOSFET DEVICES; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY;

METAL GATES; SOI IMPURITY CONCENTRATIONS; TIN GATES; ULTRA-THIN SILICON;

FILM THICKNESS;

EID: 36248949086     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.028     Document Type: Article

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