Minority carrier effects in nanoscale Schottky contacts

Nanotechnology

Volumn 20, Issue 35, 2009, Pages

  Hao, Lifeng ^a   Bennett, P A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT INTERFACE; CURRENT VOLTAGE; FREE SURFACES; GENERATION CURRENT; IDEALITY FACTORS; ISLAND SIZE; LARGE SHIFTS; MAJORITY CARRIERS; MINORITY CARRIER; NANO SCALE; ORDERS OF MAGNITUDE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SI (1 1 1); SIZE AND SHAPE; TUNNEL CURRENTS; ZERO-BIAS CONDUCTANCE;

POINT CONTACTS; PRASEODYMIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICIDES; VACUUM; WIND TUNNELS;

NANOSTRUCTURED MATERIALS;

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC FIELD; ELECTRIC POTENTIAL; NANOANALYSIS; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; VACUUM;

EID: 70249084505     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/35/355201     Document Type: Article

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