Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Soubiron, T ^a   Stiufiuc, R ^a   Patout, L ^a   Deresmes, D ^a   Grandidier, B ^a   Stivenard D ^a   Koble J ^b   Maier, M ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b Omicron Nanotechnology GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; NANOWIRES; SCANNING TUNNELING MICROSCOPY; SILICON; TEMPERATURE DISTRIBUTION; TITANIUM COMPOUNDS; TRANSPORT PROPERTIES;

SCHOTTKY BARRIER HEIGHT; SILICIDE NANOWIRES; VARIABLE TEMPERATURES;

SCHOTTKY BARRIER DIODES;

EID: 33947135531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711378     Document Type: Article

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