Co/Si(1 1 1) and Co/Si(1 1 1)-H interfaces: A comparative core-level photoemission study

Applied Surface Science

Volumn 233, Issue 1-4, 2004, Pages 411-418

  Flammini, R ^a,b   Wiame, F ^a   Belkhou, R ^a   Taleb Ibrahimi, A ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNR   (Italy)

Author keywords

Co Si(1 1 1); Core level photoemission; H passivation

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CORE ANALYSIS; DECOMPOSITION; ELECTRON EMISSION; ELECTROSTATICS; HYDROGENATION; PHOTOEMISSION; PRESSURE EFFECTS; QUARTZ; SILICON; SURFACES;

CO/SI(111); COBALT-RICH PHASE; CORE-LEVEL PHOTOEMISSION; H PASSIVATION;

INTERFACES (MATERIALS);

EID: 2942587230     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.04.013     Document Type: Article

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