Progress towards a physical contact model for scanning spreading resistance microscopy

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 132-137

  Eyben, P ^a,b   Denis, S ^a   Clarysse, T ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

AFM; Carrier profile; Microscopy; Quantification; Spreading resistance; SSRM; Surface states; Two dimensional

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; IMAGE ANALYSIS; MICROSCOPIC EXAMINATION;

SCANNING SPREADING RESISTANCE SPECTROSCOPY (SSRM);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042012762     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00019-9     Document Type: Conference Paper

References (8)

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2. P. De Wolf, Two-dimensional carrier profiling of semiconductor structures with nanometer resolution, Ph.D., KUL, May 1998.
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4. V.V. Zavyalov, J.S. mcMurray, C.C. Williams, Proc. 1998 Int. Conf. on Characterization and Metrology for ULSI Technology (Gaithersburg). In: D.G. Seiler, A.C. Diebold, W.M. Bullis, T.J. Schaffner, R. McDonald, E.J. Walters (Eds.), AIP Conf Proc-449, 753 (1998).
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