Study of aluminum thermomigration as a low thermal budget technique for innovative power devices

Microelectronics Reliability

Volumn 43, Issue 4, 2003, Pages 565-569

  Morillon, B ^a,b   Dilhac, J M ^a   Ganibal, C ^a   Anceau, C ^b  

^a LAAS CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH;

THERMOMIGRATION;

ELECTRIC EQUIPMENT;

EID: 0037383811     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00025-8     Document Type: Conference Paper

References (7)

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2. + zones by Al thermomigration in a temperature gradient RTP furnace, 199th ECS Meeting, Washington DC, USA, March 2001, ECS Proc. vol. 2001-9. p. 393-400.
3. Pierre F, Aachboun S, Bonnaud O, Lhermitte H, Ranson P, Anceau C, et al. Deep discrete trenches filled by in situ doped polysilicon: an alternative method for junction insulating box. In: Proceedings of the SPIE, vol. 3881, 1999. p. 252.
4. Causse O, Austin P, Sanchez J-L. A new peripheral planar structure allowing a symmetrical blocking voltage, CAS'99, 1999. p. 465.
5. Dilhac J-M, Ganibal C. Temperature gradient rapid thermal processor, 197th ECS Meeting, Toronto, Canada, May 2000, ECS Proc. vol. 2000-9. p. 421-8.
6. O'Mara W.C., Herring R.B., Hunt L.P. Handbook of semiconductor silicon technology. 1990;Noyes Publication, Park Ridge. p. 313.
7. Anthony T.R., Cline H.E. Random-walk of liquid droplets migrating in silicon. J. Appl. Phys. 47:1976;2316.