Al thermomigration applied to the formation of deep junctions for power device insulation

Microelectronics Reliability

Volumn 39, Issue 1, 1999, Pages 23-27

  Dilhac, J M ^a   Cornibert, L ^a   Ganibal, C ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; RAPID THERMAL ANNEALING; SILICON; THERMAL INSULATION;

THERMOMIGRATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032661661     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00158-9     Document Type: Article

References (8)

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