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Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

Photoetching mechanisms of GaN in alkaline S2O8 2- solution

(4) Van Dorp, D H a Weyher, J L b,c Kooijman, M R a Kelly, J J a

a UTRECHT UNIVERSITY (Netherlands)

b RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONTACTS; ETCHING KINETICS; OPEN CIRCUIT CONDITIONS; PEROXYDISULFATE; PHOTO-ETCHING; PHOTOGALVANIC EFFECTS;

GALLIUM NITRIDE; PLATINUM; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 69549122430 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3183807 Document Type: Article

Times cited : (63)

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