Photoenhanced wet chemical etching of MBE grown gallium nitride

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 68, Issue 1, 1999, Pages 52-55

  Stanton, N M ^a   Kent, A J ^a   Hawker, P ^a   Cheng, T S ^a   Foxon, C T ^a   Korakakis, D ^a   Campion, R P ^a   Staddon, C R ^a   Middleton, J R ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOCHEMICAL REACTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033285508     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00416-X     Document Type: Article

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