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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2399-2402

Preparation of RhO2 thin films by reactive sputtering and their characterizations

(4) Kato, K a Abe, Y a Kawamura, M a Sasaki, K a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Plasma emission spectra; Reactive sputtering; Resistivity; RhO2 thin film; TCR; XPS; XRD

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; INTERFEROMETRY; OXIDATION; RHODIUM COMPOUNDS; SPUTTERING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA EMISSION;

THIN FILMS;

EID: 0035301711 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2399 Document Type: Article

Times cited : (21)

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