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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 1, 2000, Pages 245-247

Electrical properties of amorphous Rh oxide thin films prepared by reactive sputtering

(4) Abe, Yoshio a Kato, Kiyohiko a Kawamura, Midori a Sasaki, Katsutaka a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; COMPOSITION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; INTERFEROMETRY; MAGNETRON SPUTTERING; RHENIUM COMPOUNDS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINITY; REACTIVE SPUTTERING; TEMPERATURE COEFFICIENT OF RESISTANCE;

THIN FILMS;

EID: 0033904730 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.39.245 Document Type: Article

Times cited : (8)

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