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Volumn 106, Issue 3, 2009, Pages

Observation of strain in pseudomorphic Si1-x Gex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

(7) Yu, Ronghua a Anisha, R b Jin, Niu b Chung, Sung Yong b Berger, Paul R a,b Gramila, Thomas J a Thompson, Phillip E c

a OHIO STATE UNIVERSITY (United States)

b Ohio State University (United States)

c NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BULK SINGLE CRYSTALS; COMPRESSIVE STRAIN; ELECTRON TUNNELING SPECTROSCOPY; ESAKI TUNNELS; HIGH-SENSITIVITY; LOW NOISE; MEV ENERGY; PHONON ENERGIES; PHONON SPECTRUM; RESIDUAL STRAINS; RESONANT INTERBAND TUNNEL DIODES; RESONANT INTERBAND TUNNELING DIODES; SI SUBSTRATES; SI/SIGE; TRANSVERSE ACOUSTIC PHONONS; TUNNELING BARRIER; WEIGHTED AVERAGES;

AUGER ELECTRON SPECTROSCOPY; DIODES; ELECTRON TUNNELING; ELECTRONS; GERMANIUM; PHONONS; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SPECTROSCOPY; SUBSTRATES; TUNNEL DIODES;

WIND TUNNELS;

EID: 69149083845 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3187832 Document Type: Article

Times cited : (3)

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