An efficient HBT/RTD oscillator for wireless applications

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 5, 2001, Pages 193-195

  De Los Santos, Héctor J ^a,b   Chui, Kelvin K ^a   Chow, David H ^c   Dunlap, Howard L ^c  

^a BOEING COMPANY   (United States)

^b European Headquarter and Development Center   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

HBT; Oscillator; Quantum device; Resonant tunneling; RTD; Wireless

Indexed keywords

ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES; WIRELESS TELECOMMUNICATION SYSTEMS;

QUANTUM DEVICE; RESONANT TUNNELING DIODE;

MICROWAVE OSCILLATORS;

EID: 0035351873     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.923025     Document Type: Letter

References (17)

1. Personal communications: Quo vadis
2. Low-power radio-frequency ICs for portable communications
3. InP-based high performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant tunneling device
4. Digital circuit applications of resonant tunnelling devices
5. Resonant tunneling transistors for threshold logic circuit applications
6. RTD/HFET low standby power SRAM gain cell
7. 12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates
8. InP-based HFETs and RTDs for high speed digital circuitry
9. A novel 3-D integrated HFET/RTD frequency multiplier
10. DHBT/RTD-based active frequency multiplier for wireless communications
11. Bipolar junction transistor(BJT)-resonant tunneling diode (RTD) oscillator and circuit method
12. Current-voltage characteristics of GaAs/AlAs double-barrier resonant tunneling diodes with a Si-planar-doped barrier
13. Monolithic integration of resonant tunneling diodes and heterojunction bipolar transistors on patterned InP substrates