Electrical characteristics of high performance spc and milc p-channel ltps-tft with high- κ gate dielectric

Electrochemical and Solid-State Letters

Volumn 12, Issue 10, 2009, Pages

  Ma, Ming Wen ^a   Chiang, Tsung Yu ^a   Yeh, Chi Ruei ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; GATE CAPACITANCE; HIGH FIELD; LOW TEMPERATURE POLY-SILICON THIN-FILM TRANSISTORS; LOW THRESHOLD VOLTAGE; LTPS-TFT; METAL-INDUCED LATERAL CRYSTALLIZATION; OPERATION VOLTAGE; PASSIVATION METHODS; SOLID-PHASE CRYSTALLIZATION; SUBTHRESHOLD SWING; TRAP STATE;

CRYSTALLIZATION; ELECTRIC POTENTIAL; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; PASSIVATION; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 68949150580     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3177277     Document Type: Article

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