Effects of NH3 plasma pretreatment before crystallization on low-temperature-processed poly-si thin-film transistors

Journal of the Electrochemical Society

Volumn 153, Issue 8, 2006, Pages

  Fan, Ching Lin ^a   Yang, Tsung Hsien ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTALLIZATION; ELECTROCHEMISTRY; FILM GROWTH; HYDROGEN; NITROGEN; PLASMA APPLICATIONS; POLYSILANES; POLYSILICON;

LOW-TEMPERATURE-PROCESSED (LTP); NITROGEN RADICALS; PLASMA PRETREATMENT; SOLID-PHASE CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 33745485656     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2207000     Document Type: Article

References (28)

1. B. C. Hseih, M. K. Hatalis, and D. W. Greve, IEEE Trans. Electron Devices, 35, 1842 (1988).
2. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, IEEE Trans. Electron Devices, 48, 845 (2001).
3. M. K. Hatalis and D. W. Greve, J. Appl. Phys., 63, 2260 (1988).
4. T. Sameshima, S. Usui, and M. Sekiya, IEEE Electron Device Lett., 7, 276 (1986).
5. J. Nakata, J. Appl. Phys., 82, 5446 (1997).
6. M. K. Hatalis and D. W. Greve, IEEE Electron Device Lett., 8, 361 (1987).
7. G. Liu and S. J. Fonalsh, Appl. Phys. Lett., 62, 2554 (1993).
8. M. K. Kang, K. Akashi, T. Matsui, and H. Kuwano, Solid-State Electron., 38, 383 (1995).
9. K. Pangal, J. C. Sturm, and S. Wagner, J. Appl. Phys., 85, 1900 (1999).
10. A. Yin and S. J. Fonash, J. Vac. Sci. Technol. A, 12, 1237 (1994).
11. R. Bilyalov, J. Poortrnahs, R. Sharafutdinov, S. Khmel, V. Schukin, O. Semenova, and L. Fedina, IEE Proc.-G: Circuits, Devices Syst., 150, 293 (2003).
12. S. Kasouit, P. Roca, I. Cabarrocas, R. Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, and I. D. French, J. Non-Cryst. Solids, 338-340, 369 (2004).
13. K. C. Hsu, B. Y. Chen, H. T. Hsu, and K. C. Wang, Jpn. J. Appl. Phys., Part 1, 33, 639 (1994).
14. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G Lewis, and A. C. Chiang, IEEE Electron Device Lett., 12, 181 (1991).
15. N. H. Nickle, A. Yin, and S. J. Fonash, Appl. Phys. Lett., 65, 3099 (1994).
16. C. L. Fan and M. C. Chen, Electrochem. Solid-State Lett., 5, G75 (2002).
17. H. C. Cheng, F. S. Wang, and C. Y. Huang, IEEE Trans. Electron Devices, 44, 64 (1993).
18. X. Zeng, X. W. Sun, J. Li, and J. K. Sin, Microelectron. Reliab., 44, 435 (2004).
19. C. K. Yang, T. F. Lei, and C. L. Lee, Tech. Dig. - Int. Electron Devices Meet., 1994, 505.
20. C. L. Fan and T. S. Yang, Electrochem. Solid-State Lett., 9, H8 (2006).
21. C. V. Thompson, J. Appl. Phys., 58, 763 (1985).
22. R. B. Iverson and R. Reif, J. Appl. Phys., 62, 1675 (1987).
23. I. W. Wu, A. Chiang, M. Fuse, L. Ovecoglu, and T. Y. Huang, J. Appl. Phys., 65, 4036 (1989).
24. E. Srinivasan and G. N. Parsons, J. Appl. Phys., 81, 2847 (1997).
25. J. Levinson, G. Este, M. Rider, and P. J. Scanlon, J. Appl. Phys., 53, 1193 (1982).
26. R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, 361, 1915 (1989)
27. B. A. Khan and R. Pandya, IEEE Trans. Electron Devices, 37, 1727 (1990).
28. M. Hack A. G. Lewis, and I. W. Wu, IEEE Trans. Electron Devices, 40, 890 (1993).