Characteristics of HfO2/Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO2 gate dielectric and O2 plasma surface treatment

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3489-3493

  Ma, Ming Wen ^a   Chiang, Tsung Yu ^a   Wu, Woei Cherng ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

3 D integration; High ; Low temperature polycrystalline silicon thin film transistors (LTPS TFTs); Oxygen plasma; System on panel (SOP)

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; MOSFET DEVICES; NONMETALS; OXYGEN; PLASMA APPLICATIONS; PLASMAS; POLYSILICON; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SURFACE DEFECTS; SURFACE TREATMENT; THIN FILM DEVICES; TRANSISTORS;

3-D INTEGRATION; INTERFACE QUALITIES; INTERFACIAL LAYERS; LOW THRESHOLD VOLTAGES; LOW-TEMPERATURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS (LTPS-TFTS); OXYGEN PLASMA; OXYGEN PLASMAS; PLASMA SURFACE TREATMENTS; POLYCRYSTAL LINES; SEMI-CONDUCTORS; SUBTHRESHOLD SWINGS; SYSTEM-ON-PANEL (SOP);

THIN FILM TRANSISTORS;

EID: 57149138864     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006543     Document Type: Article

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