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Volumn , Issue , 1996, Pages 283-286

A Highly Stable SRAM Memory Cell with Top-Gated P-N Drain Poly-Si TFTs for 1.5V Operation

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; MEMORY ARCHITECTURE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR STORAGE; BIPOLAR TRANSISTORS; ELECTRIC CURRENTS; GATES (TRANSISTOR); RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM TRANSISTORS;

EID: 0030387666     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553585     Document Type: Conference Paper
Times cited : (31)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.