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Volumn , Issue , 1996, Pages 283-286
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A Highly Stable SRAM Memory Cell with Top-Gated P-N Drain Poly-Si TFTs for 1.5V Operation
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NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CELLS;
CYTOLOGY;
MEMORY ARCHITECTURE;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR STORAGE;
BIPOLAR TRANSISTORS;
ELECTRIC CURRENTS;
GATES (TRANSISTOR);
RANDOM ACCESS STORAGE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
THIN FILM TRANSISTORS;
BIPOLAR ACTION;
CELL-BE;
CELL/B.E;
CELL/BE;
HIGH SPEED;
HIGHLY STABLES;
LOW VOLTAGES;
PERFORMANCE;
POLY-SI TFTS;
SRAM MEMORY CELLS;
STATIC RANDOM ACCESS STORAGE;
SEMICONDUCTOR STORAGE;
LIGHTLY DOPED OFFSET;
MEMORY CELL;
TOP GATED STRUCTURES;
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EID: 0030387666
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1996.553585 Document Type: Conference Paper |
Times cited : (31)
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References (7)
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