Electrical properties of low-temperature-compatible P-channel polycrystalline-silicon TFTs using high-κ gate dielectrics

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 1027-1034

  Yang, Ming Jui ^a,b   Chien, Chao Hsin ^a,b   Lu, Yi Hsien ^a   Shen, Chih Yen ^b   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Hafnium silicate (HfSiO ); High dielectric constant (high ); Negative bias temperature instability (NBTI); Polycrystalline silicon thin film transistors (poly Si TFTs)

Indexed keywords

ELECTRIC PROPERTIES; GATE DIELECTRICS; PERMITTIVITY; POLYSILICON; THRESHOLD VOLTAGE;

HAFNIUM SILICATE; NEGATIVE BIAS TEMPERATURE INSTABILITY;

THIN FILM TRANSISTORS;

EID: 41949083892     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.916759     Document Type: Article

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